Samsung Electronics today announced that it has begun mass production of a vertical NAND (V-NAND) chip that it claims provides the highest bit density in the industry. The 1-terabit triple-level cell (TLC) eighth-generation V-NAND chip was revealed at Flash Memory Summit 2022 and Samsung Memory Tech Day 2022.

Vertical NAND stacks single NAND planes together to provide higher storage capacity and faster speeds than traditional NAND memory. According to Samsung, its eighth-generation V-NAND will serve as the cornerstone for storage in next-generation enterprise servers as well as the automotive market.

“As market demand for denser, greater-capacity storage pushes for higher V-NAND layer counts, Samsung has adopted its advanced 3D scaling technology to reduce surface area and height, while avoiding the cell-to-cell interference that normally occurs with scaling down,” said SungHoi Hur, Executive Vice President of Flash Product and Technology at Samsung Electronics, in a company press release. “Our eighth-generation V-NAND will help meet rapidly growing market demand and better position us to deliver more differentiated products and solutions, which will be at the very foundation of future storage innovations.”

Samsung says that its eighth-generation V-NAND features an input and output speed up to 2.4 gigabits per second (1.2 times more than the prior generation), making it suitable for the performance requirements of PCIe 4.0 and PCIe 5.0.